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Memory and CIS


The traditional DRAM 1T-1C unit consists of a transistor and a capacitor, usually the size of 8-12F2, although 6F2 technology has also appeared, but its process is extremely complex, the cost is difficult to drop down. The complexity of the traditional process is caused by the capacitor in the 1T-1C unit, which has become the bottleneck of the further reduction of the size of the memory. The reason lies in the DRAM logic state is by the stored in the capacitor charge number and the charge quantity not less than certain limits, otherwise it will because the data retention time is short and cannot be identified the logic state. The amount of charge is mainly determined by the capacitance of the capacitor, so it is difficult to reduce the capacitance of the capacitor. On the other hand, the existing process level to reduce the need to update the device and it is difficult to ensure that the leakage current and other parameters of the stability, it is difficult to improve the finished product rate, the extension of the research and development cycle. 1T-1C these disadvantages will also DRAM manufacturers spared to the loss or micro profit situation. Poor is a change, the major manufacturers are actively looking for alternative concepts 1T-1C technology.

A lot of people have tried to replace the 1t-1c technology but there is no one really successful, only worth mentioning is a in recent years has been heatedly debated the so-called "capacitance" storage unit technology and its working principle based on transistors of the floating body effect. Although it has the advantages of simpler structure, but its narrow induction range and temperature instability and require the use of expensive SOI wafers of the still is the only laboratory technology and can not be the industry widely used. Even so, there are still provide the technology companies (such as innovative silicon Inc.) in the IDM obtained several tens of millions of dollars in licensing fees to develop products based on this technology, the reason is very simple: in the traditional dynamic memory technology unprofitable, people can only send to other alternative technologies, even if it is still just laboratory technology ".

Including the recent international electron devices meeting (International electron devices meeting, so far no one has proposed similar to our unit technology, so we can be sure we have invented the technology is currently the world's only. The SFG device memory cell proposed by the East micro semiconductor has an overwhelming advantage compared to the existing 1T-1C memory cell and the body cell floating (FBC) memory cell.


The solid state image sensor is a kind of function device which uses the photoelectric conversion function of the photoelectric device, and converts the light image of the sensor surface into an image electric signal corresponding to the optical image. The solid state image sensor is an integrated and functional photoelectric device which is composed of a number of photosensitive cells and a shift register which are arranged on the same semiconductor substrate. Solid state image sensor structure cable array and plane array in two forms, it will intensity space distribution and conversion to and light intensity into proportion ranging from the size of the charge packet spatial distribution, and then through the shift register will be the charge packet formation a series of varying amplitude of timing pulse sequence output. The solid-state image sensor uses the photoelectric conversion function of the photosensitive unit to convert the optical image which is projected onto the photosensitive unit into an image electric signal. Solid state image sensor has the advantages of small size, light weight, high analysis image, low power consumption, low voltage and so on. Has been widely used in image processing, TV, automatic control, measurement and robotics and other fields. It is divided into two kinds of CCD and CMOS. CMOS image sensor has an overwhelming share of the market, but it also faces a low filling rate and complex structure, etc.. East micro Semiconductor Co., Ltd. plans to give full play to the advantages of SFGT devices, the development of image sensor products based on this technology, which occupied the huge market.

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